As stuff breaks
Maurizio Bisogni via PhysOrg.com – Science, Research, Technology, Physics, Nanotech, Space News
3 hours ago ·
Never ending liht bulbs?
Ex nihilo: Dynamical Casimir effect in metamaterial converts vacuum fluctuations into real photons
phys.org
(Phys.org) —In the strange world of quantum mechanics, the vacuum state (sometimes referred to as the quantum vacuum, simply as the vacuum) is a quantum system’s lowest possible energy state. While not containing physical particles, neither is it an empty void: Rather, the quantum vacuum contains …..
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Richard Brown I can show you a video of it.
2 hours ago · Like · 1
Richard Brown It’s another (3 now I think) covered within the Primer Fields that Azure brought to my attention in Ray’s group.
2 hours ago · Like
Richard Brown Oh, and I meant the technical papers released “SINCE” the video…
2 hours ago · Like
Marco Magagnini woow.. where is the Video? thanks
2 hours ago · Like
Richard Brown Start here.http://youtu.be/9EPlyiW-xGI
The Primer Fields Part 1
http://www.youtube.com
In this video series the currently accepted theories of physics and astrophysics…See More
2 hours ago · Like · Remove Preview
Dan Corey In the first several minutes of that video I’m already highly skeptical of the scientific merit. He doesn’t speak like a scientist at all. Scientists have hypothesis, this guy says unequivocally that he has the answer.
I don’t have the domain expertise to claim he’s wrong on a factual basis but judging by the way he speaks I doubt there’s much to his claims.
about an hour ago · Like
Richard Brown I would say keep watching. As to the voice, I assume it’s an actor. As to the assertion? How else do you attack an accepted theory. I have been informed that the thesis has been submitted to a number of journals, but no specifics. I have checked the re…See More
about an hour ago · Like
Richard Brown I know that all sounds truncated, I’ll try to clarify….”I could fin…” In this statement, I mean, I couldn’t find anyone conducting and publishing results in the field, nor has anyone even suggested it. BUT..If you look at the work that HAS been pub…See More
about an hour ago · Like
Richard Brown Srry again. Third journal publication: http://phys.org/news/2013-03-nihilo-dynamical-casimir-effect-metamaterial.html – https://thesingularityeffect.wordpress.com/2013/03/03/some-vindication/ – Still looking for the other one
Ex nihilo: Dynamical Casimir effect in metamaterial converts vacuum fluctuations into real photons
phys.org
(Phys.org) —In the strange world of quantum mechanics, the vacuum state (someti…See More
about an hour ago · Like · Remove Preview
Richard Brown This just popped up on Kurzweil in between posts. http://www.collective-evolution.com/2013/03/08/nasa-discovers-hidden-portals-in-earths-magnetic-field/
NASA Discovers Hidden Portals In Earth’s Magnetic Field
http://www.collective-evolution.com
Our planet has come a long way in scientific breakthroughs and discoveries. Main…See More
a few seconds ago · Like · Remove Preview
Richard Brown It goes with the theory too
Article on Phase changing tech
Phase Change Memory: Fundamentals and Measurement Techniques March 2010 1 PHASE CHANGE MEMORY (variously abbreviated as PCM, PRAM, or PCRAM) is an emerging non-volatile computer memory technology. It may some day replace flash memory because it is not only much faster and scaleable to smaller dimensions than flash memory, but it’s also more resilient, offering up to 100 million write cycles. This article will address the underlying technology of phase change memory devices and the latest techniques for testing them. What is PCM and how does it work? A PCM cell is a tiny chunk of a chalcogenide alloy that can be switched rapidly from an ordered crystalline phase (with low resistance) to a disordered, amorphous phase (with much higher resistance) through the focused application of heat in the form of an electrical pulse. These same materials are also widely used in the active layers of re-writable optical media such as CDs and DVDs. The switch from the crystalline to the amorphous phase and back is triggered by melting and quick cooling (or a slightly slower process known as re-crystallization). One of the most promising PCM materials is GST (germanium, antimony, and tellurium), which has a melting temperature in the range of 500º–600ºC. The differing levels of resistivity of the crystalline and amorphous phases of these alloys are what allow them to store binary data. The high resistance amorphous state is used to represent a binary 0; the low resistance crystalline state represents a 1. The newest PCM designs and materials can achieve multiple distinct levels [1], for example, 16 crystalline states, not just two, each with different electrical properties. This allows a single cell to represent multiple bits, and to increase memory density substantially, which is currently done in flash memory. The amorphous state vs. the crystalline state A brief overview of the differences between the amorphous and crystalline states may help clarify how PCM devices work. In the amorphous phase, the GST material has short-range atomic order and low free electron density, which results in higher resistivity. This is sometimes referred to as the RESET phase, because it is usually formed after a RESET operation, in which the temperature of the DUT is raised slightly above the melting point, then the GST is suddenly quenched to cool it. The rate of cooling is critical for the formation of the amorphous layer. The typical resistance of the amorphous layer can exceed one mega-ohm. In the crystalline phase, the GST material has long-range atomic order and high free electronic density, which results in lower resistivity. This is also known as the SET phase because it is formed after a SET operation, in which the temperature of the material is raised above the Phase Change Memory: Fundamentals and Measurement Techniques Alexander Pronin, Lead Applications Engineer Keithley Instruments, Inc. A G R E A T E R M E A S U R E O F C O N F I D E N C E Top electrode Crystalline GST /crystalline GST Thermal insulator Resistor (heater) I Bottom electrode Figure 1. Typical PCM device structure.
Phase change materials progress
SAFC Hitech Successfully Demonstrates Device-Quality GST September 4, 2008 St. Louis, MO - September 4, 2008 – SAFC Hitech ™, a focus area within SAFC®, a member of the Sigma-Aldrich Group (NASDAQ: SIAL), today announced that it has made significant progress in developing Germanium Antimony Telluride (GexSbyTez or GST) precursors for use in high volume manufacturing phase change memory (PCM) applications. Extensive development work has been conducted with both the precursors and with the use of conventional Metal-Organic Chemical Vapor Deposition (MOCVD) techniques to deposit them, resulting in the successful deposition of device-quality GST. These advances represent a major step towards achieving a commercially-viable solution to address the aggressive memory device scaling issues faced by the semiconductor industry to keep pace with Moore’s Law. PCM, a non-volatile computer memory, takes advantage of the unique behavioral properties of chalcogenide compounds to enable scaling of ultimate feature size further than is possible with conventional Flash memories1. This translates to greater storage capacity and superior performance for memory devices. Chalcogenide compounds, such as GST, are very attractive materials for PCM and have already been used as the basis for optical storage media and prototype PCM devices. “Until now, PCM materials have generally been deposited by sputtering or other Physical Vapor Deposition (PVD) techniques, which are line of sight methods and have inherent weaknesses relating to uniformity of deposition,” commented SAFC Hitech Chief Technology Officer, Ravi Kanjolia. “Vapor phase deposition techniques, such as MOCVD, offer several advantages in relation to GST precursors, in particular, a better step coverage for deposition on patterned substrates, industrial scaling and high compositional control. Furthermore, we have achieved advances in precursor chemistries that allow similar layers to be deposited using conventional MOCVD, without the need for an activation process.” Since 2005, SAFC Hitech has been a participant in the European Commission-supported CHEMAPH project, a consortium set up to look at deposition methods for GST films. Researchers at the company’s Bromborough facility in the UK have been actively investigating a variety of GST sources suitable for MOCVD, and have matched the physical properties of each metal precursor to enhance efficiencies at the desired growth parameters. “Variations in cracking efficiencies were one major hurdle that we had to overcome,” explained Kanjolia. “After extensive work to synthesize a number of different chemicals and characterize their physical properties, a combination of sources was found with a much improved match of thermal stability to allow decomposition to the same degree when simultaneously introduced to the deposition reactor chamber.” The actual chemicals of choice were found to be Ge(NMe2)4, Sb(NMe2)3 and iPr2Te. With these identified, SAFC Hitech then developed synthesis protocols to allow the isolation of high purity product in both small and large laboratory scale equipment. These materials are now available to customers with guaranteed quality by state-of-the-art in-house analysis. Samples have been shipped to various centers, and collaborations with partners have taken place to test the different combinations. Recent growth trials have resulted in successful deposition of device-quality GST using nitrogen as a carrier gas. “While a full process to make MOCVD devices remains to be demonstrated on anything other than very small research structures, the quality of the films on flat substrates is improving, and the precursor chemistry is ideally-suited,” concluded Kanjolia. “The next challenge is to get the correct parameters in place to control the growth and lay down the correct layers in the correct structure. The temperature window with this process remains critical, and highlights both the difficulties associated with this system and the need for advanced precursors to move forward with integration into future phase change memory applications. We are confident that our sources will allow the development of next-generation devices to maintain the speed of performance enhancement required to meet market targets.” 1 A. L. Lacaita, Solid-State Electron 50 (2006) page 24. About SAFC Hitech: SAFC Hitech provides a unique chemistry service translating application understanding into performance materials worldwide. Through collaborative partnerships and an integrated approach from research and development, process development and scale up to commercial manufacturing, SAFC Hitech invests in innovation and manufacturing enabling current and future technology needs. Further information can be found at www.safchitech.com About SAFC: SAFC® is the custom manufacturing and services group within Sigma-Aldrich that focuses on high-purity inorganics for high technology applications, cell culture products and services for bio-pharmaceutical manufacturing, biochemical production and the manufacturing of complex, multi-step organic synthesis of APIs and key intermediates. SAFC has manufacturing facilities around the world dedicated to providing manufacturing services for companies requiring a reliable partner to produce their custom manufactured materials. SAFC has four focus areas – SAFC Pharma™, SAFC Supply Solutions®, SAFC Biosciences™, and SAFC Hitech™ – and had annual sales of nearly $600 million in 2007. SAFC is one of the world’s 10 largest fine chemical businesses. For more information about SAFC, visit www.safcglobal.com About Sigma-Aldrich: Sigma-Aldrich: is a leading Life Science and High Technology company. Its biochemical and organic chemical products and kits are used in scientific and genomic research, biotechnology, pharmaceutical development, the diagnosis of disease and as key components in pharmaceutical and other high technology manufacturing. The Company has customers in life science companies, university and government institutions, hospitals, and in industry. Over one million scientists and technologists use its products. Sigma-Aldrich operates in 36 countries and has 8,000 employees providing excellent service worldwide. Sigma-Aldrich is committed to Accelerating Customer Success through Leadership in Life Science, High Technology and Service. For more information about Sigma-Aldrich, please visit its award-winning Web site at www.sigma-aldrich.com. SAFC®, SAFC Supply Solutions® and Sigma-Aldrich® are registered trademarks and SAFC Pharma™, SAFC Biosciences™ and SAFC Hitech™ are trademarks of Sigma-Aldrich Biotechnology L.P. and Sigma-Aldrich Co.
Newest computer
Home News Technology Japan builds fastest supercomputer yet
TECHNOLOGY
Japan’s ‘K computer’ petaflops its way to the top
By Alice Vincent20 June 11
Japan’s slipped back into the fast lane — in the world of supercomputing, that is, after its “K computer” sped into the top spot of the TOP500 list at the International Supercomputing Conference.
The prizewinning machine is, unsurprisingly, a bit of a beast. Comprised of 672 computer racks equipped with a current total of 68, 544 CPUS it churns out a performance of 8.162 petaflops (quadrillion floating-point operations, or calculations, per second). This is the world’s best LINPACK benchmark performance (the means used to assess computer speed) — and the “K computer” is only half-built.
“K computer” is the product of a joint effort from RIKEN and Fujitsu, who aim to begin sharing its super-speedy abilities by November 2012 to help with “global climate research, meteorology, disaster prevention and medicine.” It’s just as well the areas where the machine is meant to have “groundbreaking impact”, as the energy “K computer” takes to run would also fuel 10,000 homes, costing a cool $10 million per year. That’s from a machine with an “extraordinarily high computing efficiency ratio of 93 percent”.
When it nears its completion date, “K computer” will be operating at 10 petaflops — reflecting the intentions behind its name: “Kei” meaning 10 quadrillions — and beating rival China, whose supercomputer proved faster in October 2010. Representatives from RIKEN and Fujitsu were understandably “delighted” with K computer’s achievement, not least because it succeeded despite the devastation caused by the Great East Japan Earthquake earlier this year.
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